TK80F08K3 2013-11-01 1 toshiba field effect transistor s ilicon n channel mos type (u-mosiv) TK80F08K3 swiching regulator ? low drain-source on-resistance: r ds (on) = 3.4 m (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 75 v) ? enhancement-model: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 75 v drain-gate voltage (r gs = 20 k ) v dgr 75 v gate-source voltage v gss 20 v dc (note 1) i d 80 drain current pulse (note 1) i dp 320 a drain power dissipation (tc = 25c) p d 300 w single pulse avalanche energy (note 2) e as 250 mj avalanche current i ar 80 a repetitive avalanche energy (note 3) e ar 30 mj channel temperature (note 4) t ch 175 c storage temperature range (note 4) t stg ? 55 to 175 c thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 0.5 c/w note 1: please use devices on condition that the channel temperature is below 175c. note 2: v dd = 25 v, t ch = 25c, l = 58 h, r g = 1 , i ar = 80 a note 3: repetitive rating; pulse width limited by maximum channel temperature. note 4: 175c refers to aec-q101. note 5: using continuously under heavy loads (e.g. t he application of high temperat ure/current/voltage and the significant change in temperature, etc.) may cause this product to decr ease in the reliability significantly even if the operating conditions (i.e . operating temperature/current/volta ge, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic sensit ive device. please handle with caution. unit: mm 2.54 0.25 1. gate 2. drain heat sink 3. sourse 0.4 0.1 0.4 0.1 1.6 3.0 0.2 10.0 0.3 9.5 0.2 10.0 0.3 2.35 0.1 1.4 0.1 0.76 0.1 1.1 3.5 0.2 0.1 0.1 2.76 6.8 1.0 0.3 2.34 0.25 8.0 1 2 3 1.gate 2.drain (heat sink) 3. source jedec ? jeita ? toshiba 2-10w1a weight: 1.07 g (typ.) 1 3 2 start of commercial production 2012-06
TK80F08K3 2013-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 1 a drain cut-off current i dss v ds = 75 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 75 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 50 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on-resistance r ds (on) v gs = 10 v, i d = 40 a ? 3.4 4.3 m input capacitance c iss ? 8200 ? reverse transfer capacitance c rss ? 770 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 1140 ? pf rise time t r ? 30 ? turn-on time t on ? 55 ? fall time t f ? 33 ? switching time turn-off time t off ? 150 ? ns total gate charge (gate-source plus gate-drain) q g ? 175 ? gate-source charge1 q gs1 ? 40 ? gate-drain (?miller?) charge q gd ? 65 ? gate switch charge q sw v dd 60 v, v gs = 10 v, i d = 80 a ? 80 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 80 a pulse drain reverse current (note 1) i drp ? ? ? 320 a forward voltage (diode) v dsf i dr = 80 a, v gs = 0 v ? ?0.9 ? 1.2 v reverse recovery time t rr ? 60 ? ns reverse recovery charge q rr i dr = 80 a, v gs = 0 v, di dr /dt = 50 a/ s ? 60 ? nc marking duty 1%, t w = 10 s 0 v 10 v v gs r l = 0.75 v dd 30 v i d = 40 a v out 4.7 k80f08k 3 lot no. note 6 part no. (or abbreviation code) note 6: a line under a lot no. ident ifies the indication of product labels [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is directive 2011/65/e u of the european parliament and of the council of 8 june 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
TK80F08K3 2013-11-01 3 moisture-proof packing the tk150f04k3l is packed in a moisture-proof laminated aluminum bag. precautions for transportation and storage (1) avoid excessive vibration during transportation. (2) do not toss or drop the packed devic es to avoid ripping of the bag. (3) after opening the moisture-proof bag, the devices should be assembled within two weeks in an environment of 5 c to 30 c and rh70% or below. perform reflow at most twice. (4) the moisture-proof bag may be stored unopened for up to 12 months at 5 c to 30 c and rh90% or below. (5) if, upon opening the bag, the moisture indicator card shows humidity of 30 % or above (the color of the 30% dot has changed from blue to pink) or the expiration date has passed, the devices should be baked as follows: baking conditions: 125 c for 48 hours. since the tape materials are not heat-proof, devices shou ld be placed on either heat-proof trays or aluminum magazines when baking. 30% the humidity indicator shows an approximate ambient humidity at 25 c. if the ambient humidity is below 30%, the co lor of all the indicator dots is blue. if, upon opening the bag, the color of the 30% dot has changed from blue to pink, the devices should be baked before assembly.
TK80F08K3 2013-11-01 4 v gs = 10 v 1 10 1000 1 100 100 10 8 12 16 20 0 0.4 0.6 0.8 1 0.2 04 i d = 80 a 20 40 4 8 0 80 160 200 40 0 2 10 6 tc = ? 55c 100 25 120 46 8 10 0 100 200 250 300 50 02 v gs = 4 v 4.2 4.4 4.6 5 8 10 5.2 0 10 20 30 40 50 0.4 0.6 0.8 1.0 0 0.2 4.8 5.5 6 v gs = 4 v 4.2 4.4 4.6 5 8 10 5.2 4.8 5.5 6 150 drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs common source tc = 25 pulse test drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ) common source tc = 25 pulse test drain-source voltage v ds (v) i d ? v ds drain current i d (a) common source tc = 25 pulse test drain-source voltage v ds (v) i d ? v ds drain current i d (a) common source tc = 25 pulse test gate-source voltage v gs (v) i d ? v gs drain current i d (a) common source v ds = 10 v pulse test
TK80F08K3 2013-11-01 5 40 20 i d = 80 a 0 ? 80 0 40 80 120 160 ? 40 1 2 3 4 5 100 1000 0.1 100 1 10 100000 c iss c oss c rss 0 0.4 0.8 2.0 1 3 1000 100 v gs = 0 1 10 5 3 1.2 1.6 10 300 30 0 10 4 6 ? 80 0 40 80 120 160 ? 40 8 2 10000 100 0 60 40 0120 60 0 20 180 240 80 20 4 8 16 12 v dd = 60 v v ds v gs 30 15 200 400 0 0 80 40 200 160 100 300 120 drain power dissipation p d (w) case temperature tc (c) p d ? tc drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) common source tc = 25 pulse test drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) common source v gs = 0 v f = 1 mhz tc = 25c gate threshold voltage v th (v) case temperature t c (c) v th ? tc common source v ds = 10 v i d = 1 ma pulse test gate-source voltage v gs (v) dynamic input/output characteristics total gate charge q g (nc) drain-source voltage v ds (v) common source i d = 80 a tc = 25 pulse test r ds (on) ? tc drain? source on-resistance r ds (on) (m ) case temperature tc (c) common source v gs = 10 v pulse test
TK80F08K3 2013-11-01 6 100 s * 1 ms * 1000 0.1 10 0.1 1 100 0.01 100 10 v dss max 1 1000 10 100 1m 10m 100m 1 10 0.1 1 10 duty=0.5 0.2 0.1 0.05 0.02 0.01 p dm duty = t/t r th (ch-c) = 0.5c/w t t 0.01 r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) single pulse e as ? t ch channel temperature (initial) tch (c) avalanche energy e as (mj) r g = 1 v dd = 25 v, l = 58 h ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as test circuit waveform i ar b vdss v dd v ds 0 v 20 v safe operating area drain-source voltage v ds (v) drain current i d (a) i d max (continuous) i d max (pulsed) * dc operation tc = 25c *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. e 400 300 200 100 0 25 50 75 100 125 150 500 175 200
TK80F08K3 2013-11-01 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest ve rsions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applicat ion notes for product and the precautions and condi tions set forth in the "toshiba se miconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications , including but not limited to (a) determining t he appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? product is neither intended nor warranted fo r use in equipments or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage and/or serious public impact ( " unintended use " ). except for specific applications as expressly stated in this document, unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used f or automobiles, trains, ships and other transportation, traffic si gnaling equipment, equipment used to control combustions or expl osions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. if you use product for unintended use, toshiba assumes no liability for product. for details, please contact your toshiba sales representative. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biologi cal weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the japanese fo reign exchange and foreign trade law and t he u.s. export administration regulat ions. export and re-export of product or related software or technology are strictly prohibit ed except in compliance with all appl icable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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